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NTMS4N01R2
Power MOSFET
4.2 Amps, 20 Volts
N?Channel Enhancement?Mode
Single SO?8 Package
Features
? High Density Power MOSFET with Ultra Low R DS(on) Providing
http://onsemi.com
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?
?
?
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Higher Efficiency
Miniature SO?8 Surface Mount Package Saving Board Space;
Mounting Information for the SO?8 Package is Provided
I DSS Specified at Elevated Temperature
Drain?to?Source Avalanche Energy Specified
Diode Exhibits High Speed, Soft Recovery
Pb?Free Package is Available
4.2 AMPERES, 20 VOLTS
0.045 W @ V GS = 4.5 V
Single N?Channel
D
Applications
? Power Management in Portable and Battery?Powered Products, i.e.:
Computers, Printers, PCMCIA Cards, Cellular & Cordless Telephones
MAXIMUM RATINGS (T J = 25 ° C unless otherwise noted)
G
Rating
Drain?to?Source Voltage
Drain?to?Gate Voltage (R GS = 1.0 m W )
Gate?to?Source Voltage ? Continuous
Thermal Resistance, Junction?to?Ambient
(Note 1)
Total Power Dissipation @ T A = 25 ° C
Continuous Drain Current @ 25 ° C
Continuous Drain Current @ 70 ° C
Pulsed Drain Current (Note 4)
Thermal Resistance, Junction?to?Ambient
(Note 2)
Total Power Dissipation @ T A = 25 ° C
Continuous Drain Current @ 25 ° C
Continuous Drain Current @ 70 ° C
Pulsed Drain Current (Note 4)
Thermal Resistance, Junction?to?Ambient
(Note 3)
Total Power Dissipation @ T A = 25 ° C
Continuous Drain Current @ 25 ° C
Continuous Drain Current @ 70 ° C
Pulsed Drain Current (Note 4)
Operating and Storage Temperature Range
Single Pulse Drain?to?Source Avalanche
Energy ? Starting T J = 25 ° C
(V DD = 20 Vdc, V GS = 5.0 Vdc,
Peak I L = 7.5 Apk, L = 6 mH, R G = 25 W )
Maximum Lead Temperature for Soldering
Purposes, 1/8 ″ from case for 10 seconds
Symbol
V DSS
V DGR
V GS
R q JA
P D
I D
I D
I DM
R q JA
P D
I D
I D
I DM
R q JA
P D
I D
I D
I DM
T J , T stg
E AS
T L
Value
20
20
± 10
50
2.5
5.9
4.7
25
100
1.25
4.2
3.3
20
162
0.77
3.3
2.6
15
?55 to +150
169
260
Unit
V
V
V
° C/W
W
A
A
A
° C/W
W
A
A
A
° C/W
W
A
A
A
° C
mJ
° C
S
SO?8
CASE 751
1 STYLE 13
MARKING DIAGRAM
AND PIN ASSIGNMENT
1 8
N.C. Drain
2 7
Source Drain
3 6
Source Drain
4 5
Gate Drain
Top View
E4N01 = Device Code
A = Assembly Location
Y = Year
WW = Work Week
G = Pb?Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
Device
NTMS4N01R2
Package
SO?8
Shipping ?
2500 / Tape & Reel
reliability may be affected.
1. Mounted onto a 2 ″ square FR?4 Board (1 ″ sq. 2 oz Cu 0.06 ″ thick single sided),
t ≤ 10 seconds.
2. Mounted onto a 2 ″ square FR?4 Board (1 ″ sq. 2 oz Cu 0.06 ″ thick single sided),
t = steady state.
3. Minimum FR?4 or G?10 PCB, t = Steady State.
4. Pulse Test: Pulse Width = 300 m s, Duty Cycle = 2%.
NTMS4N01R2G SO?8 2500 / Tape & Reel
(Pb?Free)
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
? Semiconductor Components Industries, LLC, 2006
January, 2006 ? Rev. 3
1
Publication Order Number:
NTMS4N01R2/D
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